Abstract Submitted for the MAR13 Meeting of The American Physical Society Comparative Study on Intersubband Absorption in AlGaN/GaN and AlInN/GaN Heterostructures Grown on Low-Defect Substrates
نویسندگان
چکیده
Submitted for the MAR13 Meeting of The American Physical Society Comparative Study on Intersubband Absorption in AlGaN/GaN and AlInN/GaN Heterostructures Grown on Low-Defect Substrates COLIN EDMUNDS, LIANG TANG, JIAYI SHAO, DONGHUI LI, GEOFF GARDNER, MICHAEL MANFRA, OANA MALIS, Purdue University, ANDREW GRIER, ZORAN IKONIC, PAUL HARRISON, University of Leeds, DIMITRI ZAKHAROV, Brookhaven National Laboratory — Intersubband (ISB) devices utilizing III-nitrides have attracted attention for nearand far-infrared optoelectronic applications. However, the lattice mismatch between GaN and commonly used substrates results in a high defect density that hinders the vertical transport required for these devices. Furthermore, most devices in the literature utilize AlGaN/GaN heterostructures for which there is no lattice-matched alloy composition. Due to this lattice mismatch, AlGaN is not ideal for the development of complex devices such as quantum cascade lasers that often require active-region thicknesses on the order of microns for efficient operation. Fortunately, exact lattice matching occurs in AlInN/GaN heterostructures at roughly 18% In composition. To investigate the challenges of lattice-matched nitrides, we presents a comparative study of ISB absorption in high-quality AlGaN/GaN and near lattice-matched AlInN/GaN heterostructures grown by molecular-beam epitaxy on low-defect free-standing GaN substrates. Experimental measurements of transition energy, integrated absorbance and linewidth were compared to theoretical predictions that included many-body effects, interface roughness and calculations of the transition lifetime. Colin Edmunds Purdue University Date submitted: 08 Nov 2012 Electronic form version 1.4
منابع مشابه
Near-Infrared Absorption in Lattice-Matched AlInN/GaN and Strained AlGaN/GaN Heterostructures Grown by MBE on Low-Defect GaN Substrates
متن کامل
وابستگی انرژی گذارهای اپتیکی در نانوساختارهای چاههای کوانتومی GaN/AlGaN به پهنای سد و چاه کوانتومی
Internal polarizations field which take place in quantum structures of group-III nitrides have an important consequence on their optical properties. Optical properties of wurtzite AlGaN/GaN quantum well (QW) structures grown by MBE and MOCVD on c-plane sapphire substrates have been investigated by means of photoluminescence (PL) and time resolved photoluminescence (TRPL) at low-temperature. PL ...
متن کاملGaN/AlGaN strain-balanced heterostructures for near-IR quantum well photodetectors: Final report Contract: FA8655-02-M4006
This is the final report for a 1-year project funded by the European Office of Research and Development (EOARD). In this work GaN/AlGaN strain-balanced heterostructures have been designed for near-infrared absorption through intersubband transitions. By making use of existing collaborations with workers at the University of Sheffield and UMIST the semiconductor samples have been grown, characte...
متن کاملAbstract Submitted for the MAR14 Meeting of The American Physical Society Role of iron impurity complexes in degradation of GaN/AlGaN
Submitted for the MAR14 Meeting of The American Physical Society Role of iron impurity complexes in degradation of GaN/AlGaN HEMTs1 YEVGENIY PUZYREV, Vanderbilt University, SOKRATES PANTELIDES, Vanderbilt University, Oak Ridge National Laboratory, VANDERBILT UNIVERSITY TEAM — GaN/AlGaN high electron mobility transistors (HEMTs) are leading candidates for power RF devices, but they suffer from r...
متن کاملDislocation-Free GaN/AlGaN Double- Barrier Diodes Grown on Bulk GaN
While AlGaN quantum cascade electro-optic devices recently received particular interest, the behavior of such vertical devices is not well understood and their performance greatly lags behind that of horizontal devices. The RTD is a benchmark for any such quantum cascade/intersubband (ISB) device. While epitaxial quality of InGaN/AlGaN could be improved so far that blue laser diodes became poss...
متن کامل